Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
40 V
Maximum Emitter Base Voltage
12 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
10000
Maximum Base Emitter Saturation Voltage
2 V
Maximum Collector Base Voltage
40 V
Maximum Collector Emitter Saturation Voltage
1.5 V
Maximum Collector Cut-off Current
50nA
Maximum Power Dissipation
300 mW
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Inaltime
1.01mm
Latime
1.4mm
Dimensiuni
3.04 x 1.4 x 1.01mm
Detalii produs
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
Standard
100
P.O.A.
Standard
100
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
40 V
Maximum Emitter Base Voltage
12 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
10000
Maximum Base Emitter Saturation Voltage
2 V
Maximum Collector Base Voltage
40 V
Maximum Collector Emitter Saturation Voltage
1.5 V
Maximum Collector Cut-off Current
50nA
Maximum Power Dissipation
300 mW
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Inaltime
1.01mm
Latime
1.4mm
Dimensiuni
3.04 x 1.4 x 1.01mm
Detalii produs
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.