Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
12 to 30mA
Maximum Drain Source Voltage
25 V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Source Gate On-Capacitance
5pF
Dimensiuni
3.04 x 1.4 x 1.01mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Inaltime
1.01mm
Latime
1.4mm
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,25
Buc. (Livrat pe rola) (fara TVA)
€ 0,298
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
€ 0,25
Buc. (Livrat pe rola) (fara TVA)
€ 0,298
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
10 - 90 | € 0,25 | € 2,50 |
100 - 240 | € 0,10 | € 1,00 |
250 - 490 | € 0,10 | € 1,00 |
500 - 990 | € 0,09 | € 0,90 |
1000+ | € 0,09 | € 0,90 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
12 to 30mA
Maximum Drain Source Voltage
25 V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Source Gate On-Capacitance
5pF
Dimensiuni
3.04 x 1.4 x 1.01mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Inaltime
1.01mm
Latime
1.4mm
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.