Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 15mA
Maximum Drain Source Voltage
0.2 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
50 Ω
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.92 x 1.3 x 0.93mm
Inaltime
0.93mm
Latime
1.3mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
2.92mm
Tara de origine
Malaysia
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 15mA
Maximum Drain Source Voltage
0.2 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
50 Ω
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.92 x 1.3 x 0.93mm
Inaltime
0.93mm
Latime
1.3mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
2.92mm
Tara de origine
Malaysia
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.