Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 A dc
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Temperatura maxima de lucru
+150 °C
Lungime
10.63mm
Inaltime
16.12mm
Latime
4.9mm
Maximum Power Dissipation
40 W
Temperatura minima de lucru
-65 °C
Dimensiuni
10.63 x 4.9 x 16.12mm
Tara de origine
Korea, Republic Of
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,54
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,833
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 1,54
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,833
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 90 | € 1,54 | € 15,40 |
100 - 240 | € 1,21 | € 12,10 |
250 - 490 | € 1,17 | € 11,70 |
500 - 990 | € 1,01 | € 10,10 |
1000+ | € 0,85 | € 8,50 |
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 A dc
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Temperatura maxima de lucru
+150 °C
Lungime
10.63mm
Inaltime
16.12mm
Latime
4.9mm
Maximum Power Dissipation
40 W
Temperatura minima de lucru
-65 °C
Dimensiuni
10.63 x 4.9 x 16.12mm
Tara de origine
Korea, Republic Of