Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
60 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Maximum Power Dissipation
75 W
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
70 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
2 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
9.28 x 10.28 x 4.82mm
Temperatura maxima de lucru
+150 °C
Detalii produs
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
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Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
60 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Maximum Power Dissipation
75 W
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
70 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
2 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
9.28 x 10.28 x 4.82mm
Temperatura maxima de lucru
+150 °C
Detalii produs
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.