Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
50 V
Maximum Emitter Base Voltage
5 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
16
Transistor Configuration
Common Emitter
Number of Elements per Chip
7
Minimum DC Current Gain
1000
Maximum Collector Emitter Saturation Voltage
1.6 V
Temperatura minima de lucru
-40 °C
Temperatura maxima de lucru
+85 °C
Lungime
10mm
Inaltime
1.5mm
Latime
4mm
Dimensiuni
10 x 4 x 1.5mm
Detalii produs
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
50 V
Maximum Emitter Base Voltage
5 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
16
Transistor Configuration
Common Emitter
Number of Elements per Chip
7
Minimum DC Current Gain
1000
Maximum Collector Emitter Saturation Voltage
1.6 V
Temperatura minima de lucru
-40 °C
Temperatura maxima de lucru
+85 °C
Lungime
10mm
Inaltime
1.5mm
Latime
4mm
Dimensiuni
10 x 4 x 1.5mm
Detalii produs
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.