Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
120 V
Tip pachet
TO-92
Timp montare
Through Hole
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
110 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
4.58 x 3.86 x 4.58mm
Temperatura maxima de lucru
+150 °C
Detalii produs
Small Signal NPN Transistors, Over 100V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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€ 0,107
Each (Supplied as a Tape) (cu TVA)
Impachetare pentru productie (Banda)
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€ 0,09
Each (Supplied as a Tape) (fara TVA)
€ 0,107
Each (Supplied as a Tape) (cu TVA)
Impachetare pentru productie (Banda)
1000
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
120 V
Tip pachet
TO-92
Timp montare
Through Hole
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
110 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
4.58 x 3.86 x 4.58mm
Temperatura maxima de lucru
+150 °C
Detalii produs
Small Signal NPN Transistors, Over 100V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.