Documente tehnice
Specificatii
Marca
onsemiMaximum Continuous Collector Current
160 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Number of Transistors
1
Maximum Power Dissipation
454 W
Tip pachet
TO-247
Timp montare
Through Hole
Channel Type
P
Numar pini
4
Transistor Configuration
Single
Dimensiuni
15.8 x 5.2 x 22.74mm
Temperatura maxima de lucru
+175 °C
Frecventa minima de auto-rezonanta
-55 °C
Gate Capacitance
5000pF
Tara de origine
China
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Documente tehnice
Specificatii
Marca
onsemiMaximum Continuous Collector Current
160 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Number of Transistors
1
Maximum Power Dissipation
454 W
Tip pachet
TO-247
Timp montare
Through Hole
Channel Type
P
Numar pini
4
Transistor Configuration
Single
Dimensiuni
15.8 x 5.2 x 22.74mm
Temperatura maxima de lucru
+175 °C
Frecventa minima de auto-rezonanta
-55 °C
Gate Capacitance
5000pF
Tara de origine
China