Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
51 A
Maximum Drain Source Voltage
100 V
Tip pachet
PQFN8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
12.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
63 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Latime
5.85mm
Lungime
5mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Dimensiune celula
PowerTrench
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Inaltime
1.05mm
Detalii produs
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,38
Buc. (Intr-un pachet de 25) (fara TVA)
€ 1,642
Buc. (Intr-un pachet de 25) (cu TVA)
25
€ 1,38
Buc. (Intr-un pachet de 25) (fara TVA)
€ 1,642
Buc. (Intr-un pachet de 25) (cu TVA)
25
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
25 - 75 | € 1,38 | € 34,50 |
100 - 475 | € 1,06 | € 26,50 |
500 - 975 | € 0,90 | € 22,50 |
1000 - 2975 | € 0,74 | € 18,50 |
3000+ | € 0,71 | € 17,75 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
51 A
Maximum Drain Source Voltage
100 V
Tip pachet
PQFN8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
12.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
63 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Latime
5.85mm
Lungime
5mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Dimensiune celula
PowerTrench
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Inaltime
1.05mm
Detalii produs