Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
12 V
Tip pachet
WLCSP
Timp montare
Surface Mount
Numar pini
10
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1.3V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Dual
Maximum Gate Source Voltage
±8 V
Latime
1.8mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
3.57mm
Typical Gate Charge @ Vgs
62 nC @ 3.8 V nC
Inaltime
0.14mm
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P.O.A.
5000
P.O.A.
5000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
12 V
Tip pachet
WLCSP
Timp montare
Surface Mount
Numar pini
10
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1.3V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Dual
Maximum Gate Source Voltage
±8 V
Latime
1.8mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
3.57mm
Typical Gate Charge @ Vgs
62 nC @ 3.8 V nC
Inaltime
0.14mm