Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20 to 40mA
Maximum Drain Source Voltage
25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Common Source
Configuration
Dual
Montare
Surface Mount
Tip pachet
CPH
Numar pini
6
Drain Gate On-Capacitance
6pF
Source Gate On-Capacitance
2.3pF
Dimensiuni
2.9 x 1.6 x 0.9mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Inaltime
0.9mm
Latime
1.6mm
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Incercati din nou mai tarziu
€ 0,61
Buc. (Intr-un pachet de 10) (fara TVA)
€ 0,726
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 0,61
Buc. (Intr-un pachet de 10) (fara TVA)
€ 0,726
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 10 | € 0,61 | € 6,10 |
20 - 40 | € 0,37 | € 3,70 |
50 - 90 | € 0,32 | € 3,20 |
100 - 190 | € 0,28 | € 2,80 |
200+ | € 0,27 | € 2,70 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20 to 40mA
Maximum Drain Source Voltage
25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Common Source
Configuration
Dual
Montare
Surface Mount
Tip pachet
CPH
Numar pini
6
Drain Gate On-Capacitance
6pF
Source Gate On-Capacitance
2.3pF
Dimensiuni
2.9 x 1.6 x 0.9mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Inaltime
0.9mm
Latime
1.6mm
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.