Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.9 x 1.3 x 0.97mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Inaltime
0.97mm
Latime
1.3mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,14
Buc. (Intr-un pachet de 100) (fara TVA)
€ 0,167
Buc. (Intr-un pachet de 100) (cu TVA)
100
€ 0,14
Buc. (Intr-un pachet de 100) (fara TVA)
€ 0,167
Buc. (Intr-un pachet de 100) (cu TVA)
100
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
100 - 900 | € 0,14 | € 14,00 |
1000 - 2900 | € 0,10 | € 10,00 |
3000 - 8900 | € 0,08 | € 8,00 |
9000 - 23900 | € 0,07 | € 7,00 |
24000+ | € 0,07 | € 7,00 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.9 x 1.3 x 0.97mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Inaltime
0.97mm
Latime
1.3mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.