Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 17mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
CP
Numar pini
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
3pF
Dimensiuni
2.9 x 1.5 x 1.1mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Inaltime
1.1mm
Latime
1.5mm
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 10,00
€ 0,40 Each (Supplied as a Tape) (fara TVA)
€ 11,90
€ 0,476 Each (Supplied as a Tape) (cu TVA)
Standard
25
€ 10,00
€ 0,40 Each (Supplied as a Tape) (fara TVA)
€ 11,90
€ 0,476 Each (Supplied as a Tape) (cu TVA)
Standard
25
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Banda |
---|---|---|
25 - 75 | € 0,40 | € 10,00 |
100 - 225 | € 0,34 | € 8,50 |
250 - 475 | € 0,29 | € 7,25 |
500 - 975 | € 0,25 | € 6,25 |
1000+ | € 0,23 | € 5,75 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 17mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
CP
Numar pini
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
3pF
Dimensiuni
2.9 x 1.5 x 1.1mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Inaltime
1.1mm
Latime
1.5mm
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.