Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
16 to 32mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
CP
Numar pini
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensiuni
2.9 x 1.5 x 1.1mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Inaltime
1.1mm
Latime
1.5mm
Tara de origine
China
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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P.O.A.
Impachetare pentru productie (Rola)
25
P.O.A.
Impachetare pentru productie (Rola)
25
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
16 to 32mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
CP
Numar pini
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensiuni
2.9 x 1.5 x 1.1mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Inaltime
1.1mm
Latime
1.5mm
Tara de origine
China
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.