Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ON SemiconductorTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
4 V
Maximum Collector Cut-off Current
0.5mA
Temperatura minima de lucru
-65 °C
Maximum Power Dissipation
65 W
Temperatura maxima de lucru
+150 °C
Lungime
15.75mm
Inaltime
4.82mm
Latime
10.28mm
Dimensiuni
15.75 x 10.28 x 4.82mm
Detalii produs
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
P.O.A.
Buc. (Intr-un pachet de 10) (fara TVA)
10
P.O.A.
Buc. (Intr-un pachet de 10) (fara TVA)
Informatii despre stoc temporar indisponibile
10
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ON SemiconductorTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
4 V
Maximum Collector Cut-off Current
0.5mA
Temperatura minima de lucru
-65 °C
Maximum Power Dissipation
65 W
Temperatura maxima de lucru
+150 °C
Lungime
15.75mm
Inaltime
4.82mm
Latime
10.28mm
Dimensiuni
15.75 x 10.28 x 4.82mm
Detalii produs
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.