Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
5 V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
1000
Maximum Collector Base Voltage
60 V
Maximum Collector Emitter Saturation Voltage
4 V
Maximum Collector Cut-off Current
0.5mA
Inaltime
16.51mm
Latime
4.83mm
Dimensiuni
10.67 x 4.83 x 16.51mm
Maximum Power Dissipation
65 W
Temperatura maxima de lucru
+150 °C
Lungime
10.67mm
Detalii produs
Darlington NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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P.O.A.
Impachetare pentru productie (Tub)
25
P.O.A.
Impachetare pentru productie (Tub)
25
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
5 V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
1000
Maximum Collector Base Voltage
60 V
Maximum Collector Emitter Saturation Voltage
4 V
Maximum Collector Cut-off Current
0.5mA
Inaltime
16.51mm
Latime
4.83mm
Dimensiuni
10.67 x 4.83 x 16.51mm
Maximum Power Dissipation
65 W
Temperatura maxima de lucru
+150 °C
Lungime
10.67mm
Detalii produs
Darlington NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.