Documente tehnice
Specificatii
Marca
ON SemiconductorTransistor Type
NPN
Maximum Continuous Collector Current
1.2 A
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
10 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
6
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
10000
Maximum Collector Base Voltage
30 V
Maximum Collector Emitter Saturation Voltage
1.5 V
Maximum Collector Cut-off Current
100nA
Inaltime
1mm
Latime
1.7mm
Maximum Power Dissipation
700 mW
Temperatura minima de lucru
-55 °C
Dimensiuni
3 x 1.7 x 1mm
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Detalii produs
Darlington NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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P.O.A.
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P.O.A.
3000
Documente tehnice
Specificatii
Marca
ON SemiconductorTransistor Type
NPN
Maximum Continuous Collector Current
1.2 A
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
10 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
6
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
10000
Maximum Collector Base Voltage
30 V
Maximum Collector Emitter Saturation Voltage
1.5 V
Maximum Collector Cut-off Current
100nA
Inaltime
1mm
Latime
1.7mm
Maximum Power Dissipation
700 mW
Temperatura minima de lucru
-55 °C
Dimensiuni
3 x 1.7 x 1mm
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Detalii produs
Darlington NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.