Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
5 A
Tip pachet
TO-220F
Montare
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
20
Numar pini
3
Temperatura maxima de lucru
+125 °C
Dimensiuni
10.36 x 4.9 x 16.07mm
Detalii produs
ESBC™ Power Transistor, Fairchild Semiconductor
Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
5 A
Tip pachet
TO-220F
Montare
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
20
Numar pini
3
Temperatura maxima de lucru
+125 °C
Dimensiuni
10.36 x 4.9 x 16.07mm
Detalii produs
ESBC™ Power Transistor, Fairchild Semiconductor
Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.