Documente tehnice
Specificatii
Marca
ON SemiconductorMaximum Continuous Collector Current
26.9 A
Maximum Collector Emitter Voltage
300 V
Maximum Gate Emitter Voltage
±10V
Maximum Power Dissipation
166 W
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Channel Type
N
Numar pini
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensiuni
6.73 x 6.22 x 2.39mm
Temperatura minima de lucru
-40 °C
Temperatura maxima de lucru
+175 °C
Automotive Standard
AEC-Q100
Detalii produs
Automotive Ignition IGBT, Fairchild Semiconductor
These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Documente tehnice
Specificatii
Marca
ON SemiconductorMaximum Continuous Collector Current
26.9 A
Maximum Collector Emitter Voltage
300 V
Maximum Gate Emitter Voltage
±10V
Maximum Power Dissipation
166 W
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Channel Type
N
Numar pini
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensiuni
6.73 x 6.22 x 2.39mm
Temperatura minima de lucru
-40 °C
Temperatura maxima de lucru
+175 °C
Automotive Standard
AEC-Q100
Detalii produs
Automotive Ignition IGBT, Fairchild Semiconductor
These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.