Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
10 → 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Timp montare
Surface Mount
Tip pachet
CPH
Numar pini
5
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensiuni
2.9 x 1.6 x 0.9mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Inaltime
0.9mm
Latime
1.6mm
Tara de origine
China
Detalii produs
Bipolar NPN & JFET Transistor, ON Semiconductor
Compact space-saving composite SMT package incoporating both an NPN Bipolar Transistor and N-channel JFET. In some devices the NPN emitter and JFET drain share a common connection.
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P.O.A.
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P.O.A.
20
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
10 → 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Timp montare
Surface Mount
Tip pachet
CPH
Numar pini
5
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensiuni
2.9 x 1.6 x 0.9mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Inaltime
0.9mm
Latime
1.6mm
Tara de origine
China
Detalii produs
Bipolar NPN & JFET Transistor, ON Semiconductor
Compact space-saving composite SMT package incoporating both an NPN Bipolar Transistor and N-channel JFET. In some devices the NPN emitter and JFET drain share a common connection.