Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
45 V
Tip pachet
TO-92
Montare
Through Hole
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
420
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
4.58 x 3.86 x 4.58mm
Detalii produs
Small Signal NPN Transistors, 40V to 50V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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P.O.A.
Impachetare pentru productie (Banda)
200
P.O.A.
Impachetare pentru productie (Banda)
200
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
45 V
Tip pachet
TO-92
Montare
Through Hole
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
420
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
4.58 x 3.86 x 4.58mm
Detalii produs
Small Signal NPN Transistors, 40V to 50V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.