Documente tehnice
Specificatii
Marca
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 25mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Timp montare
Surface Mount
Tip pachet
SOT-23 (TO-236AB)
Numar pini
3
Dimensiuni
3 x 1.4 x 1mm
Frecventa minima de auto-rezonanta
-65 °C
Inaltime
1mm
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Latime
1.4mm
Tara de origine
China
Detalii produs
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,29
Buc. (Livrat pe rola) (fara TVA)
€ 0,345
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
€ 0,29
Buc. (Livrat pe rola) (fara TVA)
€ 0,345
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
100 - 240 | € 0,29 | € 2,90 |
250 - 990 | € 0,25 | € 2,50 |
1000+ | € 0,21 | € 2,10 |
Documente tehnice
Specificatii
Marca
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 25mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Timp montare
Surface Mount
Tip pachet
SOT-23 (TO-236AB)
Numar pini
3
Dimensiuni
3 x 1.4 x 1mm
Frecventa minima de auto-rezonanta
-65 °C
Inaltime
1mm
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Latime
1.4mm
Tara de origine
China
Detalii produs
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.