Documente tehnice
Specificatii
Marca
NexperiaTransistor Type
PNP
Maximum Continuous Collector Current
-1 A
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
-5 V
Tip pachet
SOT-89
Montare
Surface Mount
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
-1.9 V
Maximum Collector Base Voltage
-90 V
Maximum Collector Emitter Saturation Voltage
-1.3 V
Maximum Collector Cut-off Current
-50nA
Inaltime
1.6mm
Latime
2.6mm
Maximum Power Dissipation
1.3 W
Temperatura minima de lucru
-65 °C
Dimensiuni
4.6 x 2.6 x 1.6mm
Temperatura maxima de lucru
+150 °C
Lungime
4.6mm
Tara de origine
China
Detalii produs
Darlington Transistors, Nexperia
Bipolar Transistors, Nexperia
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,22
Buc. (Pe o rola de 1000) (fara TVA)
€ 0,262
Buc. (Pe o rola de 1000) (cu TVA)
1000
€ 0,22
Buc. (Pe o rola de 1000) (fara TVA)
€ 0,262
Buc. (Pe o rola de 1000) (cu TVA)
1000
Documente tehnice
Specificatii
Marca
NexperiaTransistor Type
PNP
Maximum Continuous Collector Current
-1 A
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
-5 V
Tip pachet
SOT-89
Montare
Surface Mount
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
-1.9 V
Maximum Collector Base Voltage
-90 V
Maximum Collector Emitter Saturation Voltage
-1.3 V
Maximum Collector Cut-off Current
-50nA
Inaltime
1.6mm
Latime
2.6mm
Maximum Power Dissipation
1.3 W
Temperatura minima de lucru
-65 °C
Dimensiuni
4.6 x 2.6 x 1.6mm
Temperatura maxima de lucru
+150 °C
Lungime
4.6mm
Tara de origine
China
Detalii produs