Documente tehnice
Specificatii
Marca
MagnaChipChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
600 V
Tip pachet
TO-220F
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
580 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
26 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Temperatura maxima de lucru
+150 °C
Lungime
10.71mm
Typical Gate Charge @ Vgs
18 nC @ 10 V
Latime
4.93mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1.4V
Inaltime
16.13mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
10
P.O.A.
10
Documente tehnice
Specificatii
Marca
MagnaChipChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
600 V
Tip pachet
TO-220F
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
580 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
26 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Temperatura maxima de lucru
+150 °C
Lungime
10.71mm
Typical Gate Charge @ Vgs
18 nC @ 10 V
Latime
4.93mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1.4V
Inaltime
16.13mm
Temperatura minima de lucru
-55 °C
Tara de origine
China