Documente tehnice
Specificatii
Marca
LittelfuseMaximum Continuous Collector Current
18 A
Maximum Collector Emitter Voltage
430 V
Maximum Gate Emitter Voltage
18V
Maximum Power Dissipation
115 W
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Channel Type
N
Numar pini
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensiuni
10.29 x 9.65 x 4.83mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+175 °C
Detalii produs
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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P.O.A.
Standard
5
P.O.A.
Standard
5
Documente tehnice
Specificatii
Marca
LittelfuseMaximum Continuous Collector Current
18 A
Maximum Collector Emitter Voltage
430 V
Maximum Gate Emitter Voltage
18V
Maximum Power Dissipation
115 W
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Channel Type
N
Numar pini
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensiuni
10.29 x 9.65 x 4.83mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+175 °C
Detalii produs
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.