N-Channel MOSFET Transistor, 56 A, 230 V, 3-Pin TO-220AB International Rectifier IRFB4233PBF

Marca

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

230 V

Tip pachet

TO-220AB

Timp montare

Through Hole

Numar pini

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

370 W

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

120 nC @ 10 V

Number of Elements per Chip

1

Temperatura maxima de lucru

+175 °C

Lungime

10.66mm

Latime

4.82mm

Serie

HEXFET

Inaltime

9.02mm

Temperatura minima de lucru

-40 °C