Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
45 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Tip pachet
TO-247AC
Montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
15.9 x 5.3 x 20.3mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Detalii produs
Single IGBT over 21A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
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P.O.A.
Standard
1
P.O.A.
Standard
1
Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
45 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Tip pachet
TO-247AC
Montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
15.9 x 5.3 x 20.3mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Detalii produs
Single IGBT over 21A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.