Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
240 A
Maximum Drain Source Voltage
60 V
Serie
StrongIRFET
Tip pachet
D2PAK-7
Timp montare
Surface Mount
Numar pini
7
Maximum Drain Source Resistance
1.95 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
290 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
200 nC @ 10 V
Latime
9.65mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
4.83mm
Detalii produs
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Incercati din nou mai tarziu
€ 3,15
Buc. (Livrat pe rola) (fara TVA)
€ 3,748
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
20
€ 3,15
Buc. (Livrat pe rola) (fara TVA)
€ 3,748
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
20
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
20 - 48 | € 3,15 | € 6,30 |
50 - 98 | € 2,90 | € 5,80 |
100 - 198 | € 2,67 | € 5,34 |
200+ | € 2,44 | € 4,88 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
240 A
Maximum Drain Source Voltage
60 V
Serie
StrongIRFET
Tip pachet
D2PAK-7
Timp montare
Surface Mount
Numar pini
7
Maximum Drain Source Resistance
1.95 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
290 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
200 nC @ 10 V
Latime
9.65mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
4.83mm
Detalii produs
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.