Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
55 V
Dimensiune celula
IRFR5305PBF
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Latime
7.49mm
Number of Elements per Chip
1
Inaltime
2.39mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
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3000
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Buc. (Pe o rola de 3000) (fara TVA)
€ 0,666
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
55 V
Dimensiune celula
IRFR5305PBF
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Latime
7.49mm
Number of Elements per Chip
1
Inaltime
2.39mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V