Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
30 V
Dimensiune celula
IRF7805Z
Tip pachet
SO-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
8.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.25V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
4mm
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Inaltime
1.5mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1V
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,36
Buc. (Pe o rola de 4000) (fara TVA)
€ 0,428
Buc. (Pe o rola de 4000) (cu TVA)
4000
€ 0,36
Buc. (Pe o rola de 4000) (fara TVA)
€ 0,428
Buc. (Pe o rola de 4000) (cu TVA)
4000
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
30 V
Dimensiune celula
IRF7805Z
Tip pachet
SO-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
8.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.25V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
4mm
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Inaltime
1.5mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1V