Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
200 V
Dimensiune celula
OptiMOS 3
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
9.45mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.31mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Inaltime
4.57mm
Temperatura minima de lucru
-55 °C
Tara de origine
Germany
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Buc. (Pe o rola de 1000) (fara TVA)
€ 1,797
Buc. (Pe o rola de 1000) (cu TVA)
1000
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
200 V
Dimensiune celula
OptiMOS 3
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
9.45mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.31mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Inaltime
4.57mm
Temperatura minima de lucru
-55 °C
Tara de origine
Germany
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.