Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
26 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
130 W
Tip pachet
TO-220
Montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
10.36 x 4.57 x 15.95mm
Temperatura maxima de lucru
+175 °C
Energy Rating
0.81mJ
Temperatura minima de lucru
-40 °C
Gate Capacitance
860pF
Detalii produs
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,00
Buc. (Intr-un pachet de 10) (fara TVA)
€ 2,38
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 2,00
Buc. (Intr-un pachet de 10) (fara TVA)
€ 2,38
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 40 | € 2,00 | € 20,00 |
50 - 90 | € 1,84 | € 18,40 |
100 - 240 | € 1,75 | € 17,50 |
250 - 490 | € 1,66 | € 16,60 |
500+ | € 1,54 | € 15,40 |
Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
26 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
130 W
Tip pachet
TO-220
Montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
10.36 x 4.57 x 15.95mm
Temperatura maxima de lucru
+175 °C
Energy Rating
0.81mJ
Temperatura minima de lucru
-40 °C
Gate Capacitance
860pF
Detalii produs
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.