Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
53 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
200 W
Number of Transistors
1
Tip pachet
TO-247
Timp montare
Through Hole
Channel Type
N
Numar pini
3
Switching Speed
30kHz
Transistor Configuration
Single
Dimensiuni
16.13 x 5.21 x 21.1mm
Frecventa minima de auto-rezonanta
-40 °C
Gate Capacitance
1050pF
Temperatura maxima de lucru
+175 °C
Energy Rating
1.13mJ
Tara de origine
China
Detalii produs
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,57
Buc. (Intr-un pachet de 2) (fara TVA)
€ 3,058
Buc. (Intr-un pachet de 2) (cu TVA)
2
€ 2,57
Buc. (Intr-un pachet de 2) (fara TVA)
€ 3,058
Buc. (Intr-un pachet de 2) (cu TVA)
2
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
2 - 18 | € 2,57 | € 5,14 |
20 - 48 | € 2,23 | € 4,46 |
50 - 98 | € 2,06 | € 4,12 |
100 - 198 | € 1,89 | € 3,78 |
200+ | € 1,75 | € 3,50 |
Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
53 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
200 W
Number of Transistors
1
Tip pachet
TO-247
Timp montare
Through Hole
Channel Type
N
Numar pini
3
Switching Speed
30kHz
Transistor Configuration
Single
Dimensiuni
16.13 x 5.21 x 21.1mm
Frecventa minima de auto-rezonanta
-40 °C
Gate Capacitance
1050pF
Temperatura maxima de lucru
+175 °C
Energy Rating
1.13mJ
Tara de origine
China
Detalii produs
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.