Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
80 V
Dimensiune celula
BSC070N10NS5
Tip pachet
TDSON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
10.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
6.35mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.49mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,54
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,833
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 1,54
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,833
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 40 | € 1,54 | € 15,40 |
50 - 90 | € 1,19 | € 11,90 |
100 - 240 | € 1,10 | € 11,00 |
250 - 490 | € 1,02 | € 10,20 |
500+ | € 0,94 | € 9,40 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
80 V
Dimensiune celula
BSC070N10NS5
Tip pachet
TDSON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
10.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
6.35mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.49mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V