Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Tip pachet
TDSON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Typical Gate Charge @ Vgs
58 nC @ 10 V
Latime
6.35mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.49mm
Inaltime
1.1mm
Dimensiune celula
BSC040N10NS5
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,50
Buc. (Intr-un pachet de 10) (fara TVA)
€ 2,975
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 2,50
Buc. (Intr-un pachet de 10) (fara TVA)
€ 2,975
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 10 | € 2,50 | € 25,00 |
20 - 40 | € 2,04 | € 20,40 |
50 - 90 | € 1,88 | € 18,80 |
100 - 240 | € 1,75 | € 17,50 |
250+ | € 1,60 | € 16,00 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Tip pachet
TDSON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Typical Gate Charge @ Vgs
58 nC @ 10 V
Latime
6.35mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.49mm
Inaltime
1.1mm
Dimensiune celula
BSC040N10NS5
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V