Documente tehnice
Specificatii
Marca
Fuji ElectricMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Power Dissipation
255 W
Tip pachet
P 626
Configuration
3 Phase
Montare
PCB Mount
Channel Type
N
Numar pini
24
Switching Speed
20kHz
Transistor Configuration
3 Phase
Dimensiuni
87 x 50.2 x 12mm
Temperatura minima de lucru
-20 °C
Temperatura maxima de lucru
+110 °C
Detalii produs
IPM (Intelligent Power Module) IGBT, V-Series, Fuji Electric
The Fuji Electric V-series Intelligent Power Modules (IPM) come equipped with drive, control and protection IGBT circuits. They are easy to implement in power control applications for AC servos, air conditioning equipment and elevators. Built-in protection functions optimize and increase the lifetime of IPM IGBTs thereby safeguarding high system reliability. The IPMs come equipped with protection against over-current, short circuit, control power voltage drop and over-heating, and include output alarm signals.
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Documente tehnice
Specificatii
Marca
Fuji ElectricMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Power Dissipation
255 W
Tip pachet
P 626
Configuration
3 Phase
Montare
PCB Mount
Channel Type
N
Numar pini
24
Switching Speed
20kHz
Transistor Configuration
3 Phase
Dimensiuni
87 x 50.2 x 12mm
Temperatura minima de lucru
-20 °C
Temperatura maxima de lucru
+110 °C
Detalii produs
IPM (Intelligent Power Module) IGBT, V-Series, Fuji Electric
The Fuji Electric V-series Intelligent Power Modules (IPM) come equipped with drive, control and protection IGBT circuits. They are easy to implement in power control applications for AC servos, air conditioning equipment and elevators. Built-in protection functions optimize and increase the lifetime of IPM IGBTs thereby safeguarding high system reliability. The IPMs come equipped with protection against over-current, short circuit, control power voltage drop and over-heating, and include output alarm signals.
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.