Documente tehnice
Specificatii
Maximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
150 W
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
10.67 x 9.65 x 4.83mm
Temperatura minima de lucru
-40 °C
Temperatura maxima de lucru
+175 °C
Detalii produs
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informatii indisponibile despre stoc
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€ 2,85
Buc. (Livrat pe rola) (fara TVA)
€ 3,392
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
5
€ 2,85
Buc. (Livrat pe rola) (fara TVA)
€ 3,392
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
5 - 5 | € 2,85 | € 14,25 |
10 - 95 | € 2,34 | € 11,70 |
100 - 245 | € 1,80 | € 9,00 |
250 - 495 | € 1,72 | € 8,60 |
500+ | € 1,56 | € 7,80 |
Documente tehnice
Specificatii
Maximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
150 W
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
10.67 x 9.65 x 4.83mm
Temperatura minima de lucru
-40 °C
Temperatura maxima de lucru
+175 °C
Detalii produs
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.