Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
100 V
Tip pachet
E-Line
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
4.77mm
Latime
2.41mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
4.01mm
Detalii produs
P-Channel MOSFET, 100V to 450V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,64
Each (Supplied as a Tape) (fara TVA)
€ 0,762
Each (Supplied as a Tape) (cu TVA)
Impachetare pentru productie (Banda)
50
€ 0,64
Each (Supplied as a Tape) (fara TVA)
€ 0,762
Each (Supplied as a Tape) (cu TVA)
Impachetare pentru productie (Banda)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Banda |
---|---|---|
50 - 95 | € 0,64 | € 3,20 |
100 - 495 | € 0,49 | € 2,45 |
500 - 995 | € 0,42 | € 2,10 |
1000+ | € 0,38 | € 1,90 |
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
100 V
Tip pachet
E-Line
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
4.77mm
Latime
2.41mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
4.01mm
Detalii produs