Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
30 V
Dimensiune celula
DMP
Tip pachet
V-DFN3333
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Latime
3.35mm
Temperatura maxima de lucru
+150 °C
Lungime
3.35mm
Typical Gate Charge @ Vgs
64.2 nC @ 10 V
Inaltime
0.78mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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P.O.A.
10
P.O.A.
10
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
30 V
Dimensiune celula
DMP
Tip pachet
V-DFN3333
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Latime
3.35mm
Temperatura maxima de lucru
+150 °C
Lungime
3.35mm
Typical Gate Charge @ Vgs
64.2 nC @ 10 V
Inaltime
0.78mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Detalii produs