Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
540 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
0.87 nC @ 10 V
Number of Elements per Chip
1
Transistor Material
Si
Latime
1.4mm
Temperatura minima de lucru
-55 °C
Inaltime
1.1mm
Detalii produs
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,02
Buc. (Livrat pe rola) (fara TVA)
€ 0,024
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
200
€ 0,02
Buc. (Livrat pe rola) (fara TVA)
€ 0,024
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
200
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
540 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
0.87 nC @ 10 V
Number of Elements per Chip
1
Transistor Material
Si
Latime
1.4mm
Temperatura minima de lucru
-55 °C
Inaltime
1.1mm
Detalii produs