Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
520 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Latime
1.4mm
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Transistor Material
Si
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Lungime
3mm
Inaltime
1mm
Forward Diode Voltage
1.4V
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,06
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,071
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,06
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,071
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
520 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Latime
1.4mm
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Transistor Material
Si
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Lungime
3mm
Inaltime
1mm
Forward Diode Voltage
1.4V
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs