Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
640 mA, 870 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-563
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
1.3 Ω, 700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
530 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
1.7mm
Latime
1.25mm
Transistor Material
Si
Typical Gate Charge @ Vgs
0.62 nC @ 4.5 V, 0.74 nC @ 4.5 V
Temperatura minima de lucru
-55 °C
Inaltime
0.6mm
Tara de origine
China
Detalii produs
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
Impachetare pentru productie (Rola)
50
P.O.A.
Impachetare pentru productie (Rola)
50
Documente tehnice
Specificatii
Marca
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
640 mA, 870 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-563
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
1.3 Ω, 700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
530 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
1.7mm
Latime
1.25mm
Transistor Material
Si
Typical Gate Charge @ Vgs
0.62 nC @ 4.5 V, 0.74 nC @ 4.5 V
Temperatura minima de lucru
-55 °C
Inaltime
0.6mm
Tara de origine
China
Detalii produs