Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Transistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
400 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
60 Hz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
10.3 x 4.7 x 16mm
Tara de origine
China
Detalii produs
High Voltage Transistors, WeEn Semiconductors
Bipolar Transistors, WeEn Semiconductors
€ 17,00
€ 0,34 Each (Supplied in a Tube) (fara TVA)
€ 20,57
€ 0,411 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
50
€ 17,00
€ 0,34 Each (Supplied in a Tube) (fara TVA)
€ 20,57
€ 0,411 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
50
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Transistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
400 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
60 Hz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
10.3 x 4.7 x 16mm
Tara de origine
China
Detalii produs