Documente tehnice
Specificatii
Marca
VishayTimp montare
Through Hole
Tip pachet
TO-247AC
Maximum Continuous Forward Current
16A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Numar pini
2
Maximum Forward Voltage Drop
3.93V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
135ns
Peak Non-Repetitive Forward Surge Current
190A
Detalii produs
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
€ 76,40
€ 7,64 Each (Supplied in a Tube) (fara TVA)
€ 90,92
€ 9,09 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
10
€ 76,40
€ 7,64 Each (Supplied in a Tube) (fara TVA)
€ 90,92
€ 9,09 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
10
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar |
---|---|
10 - 24 | € 7,64 |
25 - 49 | € 6,87 |
50 - 99 | € 6,18 |
100+ | € 5,68 |
Documente tehnice
Specificatii
Marca
VishayTimp montare
Through Hole
Tip pachet
TO-247AC
Maximum Continuous Forward Current
16A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Numar pini
2
Maximum Forward Voltage Drop
3.93V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
135ns
Peak Non-Repetitive Forward Surge Current
190A
Detalii produs
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.