Documente tehnice
Specificatii
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Numar pini
3
Temperatura minima de lucru
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
1.5V
Timp montare
Through Hole
Minimum Gate Threshold Voltage
2V
Temperatura maxima de lucru
+150 °C
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Voltage
800 V
Maximum Gate Source Voltage
±30 V
Latime
4.6mm
Maximum Continuous Drain Current
4 A
Maximum Power Dissipation
38.7 W
Tip pachet
ITO-220
Lungime
10mm
Inaltime
15mm
Maximum Drain Source Resistance
3 Ω
Typical Gate Charge @ Vgs
20 nC @ 10 V
Marca
Taiwan SemiconductorInformatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
1000
P.O.A.
1000
Documente tehnice
Specificatii
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Numar pini
3
Temperatura minima de lucru
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
1.5V
Timp montare
Through Hole
Minimum Gate Threshold Voltage
2V
Temperatura maxima de lucru
+150 °C
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Voltage
800 V
Maximum Gate Source Voltage
±30 V
Latime
4.6mm
Maximum Continuous Drain Current
4 A
Maximum Power Dissipation
38.7 W
Tip pachet
ITO-220
Lungime
10mm
Inaltime
15mm
Maximum Drain Source Resistance
3 Ω
Typical Gate Charge @ Vgs
20 nC @ 10 V
Marca
Taiwan Semiconductor