Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
500 V
Tip pachet
TO-220
Serie
MDmesh, SuperMESH
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Lungime
10.4mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
9.15mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 82,00
€ 1,64 Each (In a Tube of 50) (fara TVA)
€ 97,58
€ 1,952 Each (In a Tube of 50) (cu TVA)
50
€ 82,00
€ 1,64 Each (In a Tube of 50) (fara TVA)
€ 97,58
€ 1,952 Each (In a Tube of 50) (cu TVA)
50
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 1,64 | € 82,00 |
100 - 450 | € 1,26 | € 63,00 |
500 - 950 | € 1,05 | € 52,50 |
1000 - 4950 | € 0,88 | € 44,00 |
5000+ | € 0,82 | € 41,00 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
500 V
Tip pachet
TO-220
Serie
MDmesh, SuperMESH
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Lungime
10.4mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
9.15mm
Temperatura minima de lucru
-55 °C
Detalii produs