Documente tehnice
Specificatii
Marca
Semikron DanfossMaximum Continuous Collector Current
470 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Dual Half Bridge
Tip pachet
SEMITRANS3
Montare
Panel Mount
Channel Type
N
Numar pini
7
Transistor Configuration
Series
Dimensiuni
106.4 x 61.4 x 30.5mm
Frecventa minima de auto-rezonanta
-40 °C
Temperatura maxima de lucru
+150 °C
Detalii produs
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
€ 446,16
€ 446,16 Buc. (fara TVA)
€ 530,93
€ 530,93 Buc. (cu TVA)
1
€ 446,16
€ 446,16 Buc. (fara TVA)
€ 530,93
€ 530,93 Buc. (cu TVA)
1
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar |
---|---|
1 - 1 | € 446,16 |
2 - 4 | € 419,81 |
5 - 9 | € 395,21 |
10 - 19 | € 371,86 |
20+ | € 350,19 |
Documente tehnice
Specificatii
Marca
Semikron DanfossMaximum Continuous Collector Current
470 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Dual Half Bridge
Tip pachet
SEMITRANS3
Montare
Panel Mount
Channel Type
N
Numar pini
7
Transistor Configuration
Series
Dimensiuni
106.4 x 61.4 x 30.5mm
Frecventa minima de auto-rezonanta
-40 °C
Temperatura maxima de lucru
+150 °C
Detalii produs
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.