Documente tehnice
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum DC Collector Current
-8 A
Maximum Collector Emitter Voltage
-80 V
Tip pachet
IPAK (TO-251)
Timp montare
Through Hole
Maximum Power Dissipation
20 W
Minimum DC Current Gain
60
Transistor Configuration
Single
Maximum Collector Base Voltage
10 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
20 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
6.73 x 2.38 x 6.22mm
Detalii produs
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
P.O.A.
Each (Supplied in a Tube) (fara TVA)
Impachetare pentru productie (Tub)
15
P.O.A.
Each (Supplied in a Tube) (fara TVA)
Impachetare pentru productie (Tub)
15
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Documente tehnice
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum DC Collector Current
-8 A
Maximum Collector Emitter Voltage
-80 V
Tip pachet
IPAK (TO-251)
Timp montare
Through Hole
Maximum Power Dissipation
20 W
Minimum DC Current Gain
60
Transistor Configuration
Single
Maximum Collector Base Voltage
10 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
20 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
6.73 x 2.38 x 6.22mm
Detalii produs
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.