Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonMemory Size
16kbit
Organisation
2K x 8 bit
Interfata
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Timp montare
Surface Mount
Tip pachet
SOIC
Numar pini
8
Dimensiuni
4.97 x 3.98 x 1.48mm
Lungime
4.97mm
Maximum Operating Supply Voltage
3.6 V
Latime
3.98mm
Inaltime
1.48mm
Temperatura maxima de lucru
+85 °C
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Number of Words
2K
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
2.7 V
Tara de origine
United States
Detalii produs
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 17,70
€ 1,18 Each (Supplied in a Tube) (fara TVA)
€ 21,42
€ 1,428 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
15
€ 17,70
€ 1,18 Each (Supplied in a Tube) (fara TVA)
€ 21,42
€ 1,428 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
15
Informatii despre stoc temporar indisponibile
Cantitate | Pret unitar | Per Tub |
---|---|---|
15 - 25 | € 1,18 | € 5,90 |
30 - 95 | € 1,12 | € 5,60 |
100 - 495 | € 0,99 | € 4,95 |
500+ | € 0,95 | € 4,75 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonMemory Size
16kbit
Organisation
2K x 8 bit
Interfata
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Timp montare
Surface Mount
Tip pachet
SOIC
Numar pini
8
Dimensiuni
4.97 x 3.98 x 1.48mm
Lungime
4.97mm
Maximum Operating Supply Voltage
3.6 V
Latime
3.98mm
Inaltime
1.48mm
Temperatura maxima de lucru
+85 °C
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Number of Words
2K
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
2.7 V
Tara de origine
United States
Detalii produs
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.