Transistor, MOS, N ch,50V,BSS138N

Nr. stoc RS: 167-970Producator: InfineonCod de producator: BSS138N
Vezi toate produsele din Tranzistoare MOSFET

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Specificatii

Marca

Infineon

Channel Type

N

Maximum Continuous Drain Current

230 mA

Maximum Drain Source Voltage

60 V

Tip pachet

PG-SOT-23

Timp montare

Surface Mount

Numar pini

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Power Dissipation

360 mW

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Temperatura minima de lucru

-55 °C

Temperatura maxima de lucru

+150 °C

Lungime

2.9mm

Typical Gate Charge @ Vgs

1.4 nC @ 10 V

Inaltime

1mm

Latime

1.3mm

S-ar putea să te intereseze
onsemi N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 BSS138LT1G
onsemi N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 BSS138LT1GProducator: onsemi
€ 0,238Buc. (Intr-un pachet de 25) (fara TVA)
Informatii indisponibile despre stoc

P.O.A.

Buc. (Intr-un pachet de 100) (fara TVA)

Transistor, MOS, N ch,50V,BSS138N
Selectati tipul de ambalaj

Standard

Selectati tipul de ambalaj

Standard - each

Disponibil in multiplu de 100.

Productie -

Disponibil in multiplu de 100.

Recomandat pentru comenzi cu cantitati mari. Articolele sunt gata ambalate pentru a fi introduse in utilaje, permitandu-va sa imbunatatiti eficienta productiei.

100

Disponibil in multiplu de 100
100P.O.A.
200P.O.A.
300P.O.A.
400P.O.A.
500P.O.A.
600P.O.A.
700P.O.A.
800P.O.A.
900P.O.A.
1000P.O.A.
1100P.O.A.
1200P.O.A.
1300P.O.A.
1400P.O.A.
1500P.O.A.

P.O.A.

Buc. (Intr-un pachet de 100) (fara TVA)

Transistor, MOS, N ch,50V,BSS138N
Informatii indisponibile despre stoc
Selectati tipul de ambalaj

Standard

Selectati tipul de ambalaj

Standard - each

Disponibil in multiplu de 100.

Productie -

Disponibil in multiplu de 100.

Recomandat pentru comenzi cu cantitati mari. Articolele sunt gata ambalate pentru a fi introduse in utilaje, permitandu-va sa imbunatatiti eficienta productiei.

100

Disponibil in multiplu de 100
100P.O.A.
200P.O.A.
300P.O.A.
400P.O.A.
500P.O.A.
600P.O.A.
700P.O.A.
800P.O.A.
900P.O.A.
1000P.O.A.
1100P.O.A.
1200P.O.A.
1300P.O.A.
1400P.O.A.
1500P.O.A.

Informatii indisponibile despre stoc

Incercati din nou mai tarziu

S-ar putea să te intereseze
onsemi N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 BSS138LT1G
onsemi N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 BSS138LT1GProducator: onsemi
€ 0,238Buc. (Intr-un pachet de 25) (fara TVA)

Documente tehnice

Specificatii

Marca

Infineon

Channel Type

N

Maximum Continuous Drain Current

230 mA

Maximum Drain Source Voltage

60 V

Tip pachet

PG-SOT-23

Timp montare

Surface Mount

Numar pini

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Power Dissipation

360 mW

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Temperatura minima de lucru

-55 °C

Temperatura maxima de lucru

+150 °C

Lungime

2.9mm

Typical Gate Charge @ Vgs

1.4 nC @ 10 V

Inaltime

1mm

Latime

1.3mm

S-ar putea să te intereseze
onsemi N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 BSS138LT1G
onsemi N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 BSS138LT1GProducator: onsemi
€ 0,238Buc. (Intr-un pachet de 25) (fara TVA)